No. |
Part Name |
Description |
Manufacturer |
121 |
BYW95B |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
122 |
BYW95C |
Diode Switching 600V 3A 2-Pin GALF |
New Jersey Semiconductor |
123 |
BYW95D |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
124 |
BYW95E |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
125 |
CA04-41GWA |
The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. |
Kingbright Electronic |
126 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
127 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
128 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
129 |
CGY12A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
130 |
CGY12B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
131 |
CGY13A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
132 |
CLED155 |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
133 |
CLED155F |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
134 |
CLED400 |
3 V, 50 mA, gallium arsenide infrared emitting diode |
Clairex Technologies |
135 |
CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode |
Clairex Technologies |
136 |
CLI800W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
137 |
CLI810W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
138 |
CLI820W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
139 |
CLI830W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
140 |
CLI835W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
141 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
142 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
143 |
CXY12 |
Gallium arsenide diode with a high cut-off frequency for use in frequency multipliers up to Q-Band |
Mullard |
144 |
DGS10-015A |
150V gallium arsenide schottky rectifier |
IXYS |
145 |
DGS10-015BS |
150V gallium arsenide schottky rectifier |
IXYS |
146 |
DGS10-018A |
180V gallium arsenide schottky rectifier |
IXYS |
147 |
DGS10-018BS |
180V gallium arsenide schottky rectifier |
IXYS |
148 |
DGS10-022A |
220V gallium arsenide schottky rectifier |
IXYS |
149 |
DGS10-022AS |
220V gallium arsenide schottky rectifier |
IXYS |
150 |
DGS10-025A |
250V gallium arsenide schottky rectifier |
IXYS |
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