| No. |
Part Name |
Description |
Manufacturer |
| 151 |
BM6101FV-CE2 |
1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 152 |
BM6102FV-C |
1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 153 |
BM6102FV-CE2 |
1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 154 |
BM6104FV-C |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 155 |
BM6104FV-CE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 156 |
BM6105FW-LBZ |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 157 |
BM6105FW-LBZE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 158 |
BM6108FV-LB |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 159 |
BM6108FV-LBE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation |
ROHM |
| 160 |
BSM100GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 161 |
BSM150GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 162 |
BSM150GAL120DN2E3166 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 163 |
BSM200GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
| 164 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 165 |
BSM50GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 166 |
BSM75GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 167 |
BY328 |
Diode Switching 1.5KV 2-Pin GALF |
New Jersey Semiconductor |
| 168 |
BYD73A |
Diode Switching 50V 1A 2-Pin GALF |
New Jersey Semiconductor |
| 169 |
BYV10-30 |
Diode Schottky 30V 1A 2-Pin GALF |
New Jersey Semiconductor |
| 170 |
BYW95A |
Diode Switching 200V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 171 |
BYW95B |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 172 |
BYW95C |
Diode Switching 600V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 173 |
BYW95D |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 174 |
BYW95E |
Diode Switching 400V 3A 2-Pin GALF |
New Jersey Semiconductor |
| 175 |
CA04-41GWA |
The Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. |
Kingbright Electronic |
| 176 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 177 |
CAY10 |
Gallium Arsenide parametric amplifier Varactor Diode |
Philips |
| 178 |
CAY10 |
Gallium arsenide varactor diode |
VALVO |
| 179 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 180 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| | | |
