No. |
Part Name |
Description |
Manufacturer |
1 |
1N3831 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
2 |
1N3832 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
3 |
1N3833 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
4 |
1N3834 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
5 |
1N3835 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
6 |
1N3836 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
7 |
1N3837 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
8 |
1N3838 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
9 |
1N3839 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
10 |
1N3840 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
11 |
1N3841 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
12 |
1N3842 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
13 |
1N3843 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
14 |
1N3844 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
15 |
1N3845 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
16 |
1N3846 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
17 |
1N4156 |
Stabistor Diode |
Microsemi |
18 |
1N4157 |
Stabistor Diode |
Microsemi |
19 |
1N4453 |
Stabistor Diode |
Microsemi |
20 |
1N4829 |
Stabistor Diode |
Microsemi |
21 |
1N4830 |
Stabistor Diode |
Microsemi |
22 |
1N5179 |
Stabistor Diode |
Microsemi |
23 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
24 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
25 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
26 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
27 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
28 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
29 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
30 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
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