| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N3844 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 32 |
1N3845 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 33 |
1N3846 |
SILICON PLANAR THYRISTOR DIODES |
Microwave Diode Corporation |
| 34 |
1N4156 |
Stabistor Diode |
Microsemi |
| 35 |
1N4157 |
Stabistor Diode |
Microsemi |
| 36 |
1N4453 |
Stabistor Diode |
Microsemi |
| 37 |
1N4829 |
Stabistor Diode |
Microsemi |
| 38 |
1N4830 |
Stabistor Diode |
Microsemi |
| 39 |
1N5179 |
Stabistor Diode |
Microsemi |
| 40 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 41 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 42 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 43 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 44 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 45 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 46 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 47 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 48 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 49 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 50 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 51 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 52 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 53 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 54 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 55 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 56 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 57 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 58 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
| 59 |
2N2060 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 60 |
2N2060 |
Silicon transistor differential amplifiers |
SGS-ATES |
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