| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 2 |
1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 3 |
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications |
TOSHIBA |
| 4 |
APL1001P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1000V 18.0A 0.60OHM |
Advanced Power Technology |
| 5 |
APL501J |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12Ohm |
Advanced Power Technology |
| 6 |
APL501P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12 OHM |
Advanced Power Technology |
| 7 |
APT1001 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 8 |
APT1004 |
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 9 |
APT4020 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 10 |
APT4030 |
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 11 |
APT4525AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 12 |
APT4530AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 13 |
APT5012 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 14 |
APT5025AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 15 |
APT5030AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 16 |
APT5560AN |
V(dss): 550V; 11.5A; 0.6 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 17 |
APT5570AN |
V(dss): 550V; 10.5A; 0.7 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 18 |
APT6035 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 19 |
APT6040 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
Advanced Power Technology |
| 20 |
APT6060AN |
V(dss): 600V; 11.5A; 0.6 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 21 |
APT6060BNR |
V(dss): 600V; 13.0A; 0.60 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 22 |
APT6070AN |
V(dss): 600V; 10.5A; 0.7 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 23 |
APT6070BNR |
V(dss): 600V; 12.0A; 0.70 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 24 |
BAV23QA |
Dual common cathode high-voltage switching diode |
Nexperia |
| 25 |
BAV70QA |
Dual common cathode high-speed switching diode |
Nexperia |
| 26 |
BAW56QA |
Dual common anode high-speed switching diode |
Nexperia |
| 27 |
BFC40 |
N?CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
SemeLAB |
| 28 |
BFC60 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
SemeLAB |
| 29 |
BSP129 |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
Siemens |
| 30 |
BSP135 |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
Siemens |
| | | |
