| No. |
Part Name |
Description |
Manufacturer |
| 121 |
NTE3017 |
Infrared Emitting Diode High Speed for Remote Control |
NTE Electronics |
| 122 |
NTE3027 |
Infrared Emitting Diode High Speed for Remote Control |
NTE Electronics |
| 123 |
NTE490 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 124 |
NTE491 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 125 |
NTE492 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 126 |
NTE525 |
Silicon Diode High Voltage Fast Recovery Switch |
NTE Electronics |
| 127 |
NTE66 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 128 |
NTE67 |
MOSFET N-Ch, Enhancement Mode High Speed Switch |
NTE Electronics |
| 129 |
PACDN005 |
P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR |
California Micro Devices Corp |
| 130 |
PACDN005QR |
P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR |
California Micro Devices Corp |
| 131 |
PACDN005QT |
P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR |
California Micro Devices Corp |
| 132 |
PACDN005SR |
P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR |
California Micro Devices Corp |
| 133 |
PACDN005ST |
P/ACTIVE SCHOTTKY DIODE HIGH SPEED BUS TERMINATOR |
California Micro Devices Corp |
| 134 |
PD481PI |
Photodiode High Speed, High Sensitivity |
SHARP |
| 135 |
PD49PI |
Photodiode High Speed, High Sensitivity |
SHARP |
| 136 |
Q62702-P5059 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
Siemens |
| 137 |
Q62702-P5060 |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter |
Siemens |
| 138 |
Q62702-S015 |
SIPMOS Small-Signal Transistor(N channel Depletion mode High dynamic resistance) |
Siemens |
| 139 |
Q62702-S600 |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
Siemens |
| 140 |
Q62702-S612 |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
Siemens |
| 141 |
Q62702-S655 |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
Siemens |
| 142 |
SD1100CHP |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 143 |
SD1100DD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 144 |
SD1100HD |
450 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 145 |
SD1101BD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 146 |
SD1101CHP |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 147 |
SD1101DD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 148 |
SD1101HD |
400 V, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 149 |
SD1102BD |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| 150 |
SD1102CHP |
250 V, 10 ohm, N-channel enhancement-mode high-voltage D-MOS power FET |
Topaz Semiconductor |
| | | |
