| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 2 |
1004_XC2173 |
ICs for use with Crystal Oscillators (PLL built-In) |
Torex Semiconductor |
| 3 |
1203P60 |
PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Standby and Short Circuit |
ON Semiconductor |
| 4 |
12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers |
General Semiconductor |
| 5 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
| 6 |
1N4885 |
Silicon varactor diode for use in high efficiency multiplier circuits |
Mullard |
| 7 |
1N5152 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 8 |
1N5153 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 9 |
1N5155 |
Silicon planar epitaxial varactor diode for use in multipliers up to C band |
Mullard |
| 10 |
1N5157 |
Silicon planar epitaxial varactor diode for use in multipliers C up to X band |
Mullard |
| 11 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 12 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 13 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 14 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 15 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 16 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 17 |
1S1820 |
Silicon Schottky Barrier Diode, used for UHF TV Tuner Mixer |
Hitachi Semiconductor |
| 18 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 19 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 20 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 21 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 22 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 23 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 24 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 25 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 26 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 27 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 28 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 29 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 30 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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