No. |
Part Name |
Description |
Manufacturer |
61 |
1SV277 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
62 |
1SV280 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
63 |
1SV285 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
64 |
1SV293 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
65 |
1SV294 |
Variable Resistance Attenuator Use |
SANYO |
66 |
1SV306 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
67 |
1SV310 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
68 |
1SV311 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
69 |
1SV313 |
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO |
TOSHIBA |
70 |
1SV314 |
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO |
TOSHIBA |
71 |
1SV315 |
Variabe resistance Attenuator Use |
SANYO |
72 |
1SV316 |
Variabe resistance Attenuator Use |
SANYO |
73 |
1SV328 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
74 |
1SV329 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
75 |
1SV69 |
ELECTRONIC TUNING FOR UHF/VHF TV TUNER |
Unknow |
76 |
1SV70 |
ELECTRONIC TUNING FOR UHF/VHF TV TUNER |
Unknow |
77 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
78 |
24LC22A-I/P |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
79 |
24LC22A-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
80 |
24LC22AT-I/SN |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications ... |
Microchip |
81 |
2N1742 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
82 |
2N1743 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
83 |
2N1744 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
84 |
2N2360 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
85 |
2N2361 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
86 |
2N2362 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
87 |
2N2398 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
88 |
2N2399 |
MADT® PNP germanium transistor for UHF applications |
Sprague |
89 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
90 |
2N2647 |
Leaded Thyristor UJT |
Central Semiconductor |
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