| No. |
Part Name |
Description |
Manufacturer |
| 1 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec |
Samsung Electronic |
| 2 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 3 |
128MX72 SDRAM (INTEL 1.2 VER BASE) |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet |
Samsung Electronic |
| 4 |
2N1304 |
NPN Transistor |
GPD Optoelectronic Devices |
| 5 |
2N1522 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 6 |
2N158 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 7 |
2N1605 |
Germanium NPN Transistors |
GPD Optoelectronic Devices |
| 8 |
2N2079A |
Germanium Power Transistor |
GPD Optoelectronic Devices |
| 9 |
2N2528 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 10 |
2N2834 |
Power Transistors |
GPD Optoelectronic Devices |
| 11 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 12 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 13 |
2N4276 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 14 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 15 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 16 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 17 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 18 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 19 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 20 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 21 |
319SPA-V6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 22 |
319SPA-W6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 23 |
319SPA-X6M20 |
INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE |
Mitsubishi Electric Corporation |
| 24 |
AC128 |
Germanium Small Signal Transistors |
GPD Optoelectronic Devices |
| 25 |
AC141 |
Germanium Small Signal Transistors |
GPD Optoelectronic Devices |
| 26 |
ACT4751 |
40 V, 4.0 A CC/CV Step-Down DC/DC Converter with USB PD 3.0 PPS |
Qorvo |
| 27 |
AD6641 |
250 MHz Bandwidth DPD Observation Receiver |
Analog Devices |
| 28 |
ADN2841ACP-48-RL7 |
7V; dual-loop 50Mbps-2.7Gbps laser diode driver. For DWDM dual MPD wavelength fixing, SONET OC-1/3/12/48, SDH STM-1/4/16, fiber channel, gigabit ethernet |
Analog Devices |
| 29 |
APD Series |
Silicon PIN Diodes, Packaged and Bondable (Chip) |
Skyworks Solutions |
| 30 |
AQY272 |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| | | |
