| No. |
Part Name |
Description |
Manufacturer |
| 31 |
AQY272A |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 32 |
AQY272AX |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 33 |
AQY272AZ |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 34 |
AQY274 |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 35 |
AQY274A |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 36 |
AQY274AX |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 37 |
AQY274AZ |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 38 |
AQY275 |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 39 |
AQY275A |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 40 |
AQY275AX |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 41 |
AQY275AZ |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 42 |
AQY277 |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 43 |
AQY277A |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 44 |
AQY277AX |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 45 |
AQY277AZ |
PD Type 1- channel (Form A) Type |
Matsushita Electric Works(Nais) |
| 46 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 47 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 48 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 49 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 50 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 51 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 52 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 53 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 54 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 55 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 56 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 57 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 58 |
BR34E02FVT-3 |
DDR2/DDR3 SPD EEPROM |
ROHM |
| 59 |
BR34E02FVT-3E2 |
DDR2/DDR3 SPD EEPROM |
ROHM |
| 60 |
BR34E02NUX-3 |
DDR2/DDR3 SPD EEPROM |
ROHM |
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