| No. |
Part Name |
Description |
Manufacturer |
| 1 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
| 2 |
10RIF100W |
V(rrm): 1000V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 3 |
10RIF120W |
V(rrm): 1200V; 10A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 4 |
16RIF100W |
V(rrm): 1000V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 5 |
16RIF120W |
V(rrm): 1200V; 16A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 6 |
1N3879 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 7 |
1N3879R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 8 |
1N3880 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 9 |
1N3880R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 10 |
1N3881 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 11 |
1N3881R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 12 |
1N3882 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 13 |
1N3882R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 14 |
1N3883 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 15 |
1N3883R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 16 |
1N3889 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 17 |
1N3889R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 18 |
1N3890 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 19 |
1N3890R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 20 |
1N3891 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 21 |
1N3891R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 22 |
1N3892 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 23 |
1N3892R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 24 |
1N3893 |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 25 |
1N3893R |
High Power Fast Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 26 |
1N4387 |
Silicon varactor diode for high-power frecquency multiplication applications |
Motorola |
| 27 |
20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount |
Motorola |
| 28 |
20RIF100W |
V(rrm): 1000V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 29 |
20RIF120W |
V(rrm): 1200V; 20A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
| 30 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
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