No. |
Part Name |
Description |
Manufacturer |
31 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
32 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
33 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
34 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
35 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
36 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
37 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
38 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
39 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
40 |
2N6781 |
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
41 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
42 |
2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
43 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
44 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
45 |
2N7000 |
60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
46 |
2SC1164 |
Silicon NPN epitaxial planar high power for CATV amplifiers transistor |
TOSHIBA |
47 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
48 |
2SK0755 |
Silicon N-channel Power F-MOS FET |
Panasonic |
49 |
2SK0757 |
Silicon N-channel Power F-MOS FET |
Panasonic |
50 |
2SK0758 |
Silicon N-channel Power F-MOS FET |
Panasonic |
51 |
2SK0762 |
Silicon N-channel Power F-MOS FET |
Panasonic |
52 |
2SK0762A |
Silicon N-channel Power F-MOS FET |
Panasonic |
53 |
2SK0763 |
Silicon N-channel Power F-MOS FET |
Panasonic |
54 |
2SK0763A |
Silicon N-channel Power F-MOS FET |
Panasonic |
55 |
2SK0765 |
Silicon N-channel Power F-MOS FET |
Panasonic |
56 |
2SK0765A |
Silicon N-channel Power F-MOS FET |
Panasonic |
57 |
2SK0769 |
Silicon N-channel Power F-MOS FET |
Panasonic |
58 |
2SK0782 |
Silicon N-channel Power F-MOS FET |
Panasonic |
59 |
2SK0795 |
Silicon N-channel Power F-MOS FET |
Panasonic |
60 |
2SK0796 |
Silicon N-channel Power F-MOS FET |
Panasonic |
| | | |