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Datasheets for RF P

Datasheets found :: 3349
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 08090 LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Infineon
2 0912-25 RF Power Transistors: AVIONICS Advanced Power Technology
3 0912-45 RF Power Transistors: AVIONICS Advanced Power Technology
4 0912-7 RF Power Transistors: AVIONICS Advanced Power Technology
5 1000MP RF Power Transistors: AVIONICS Advanced Power Technology
6 1002MP RF Power Transistors: AVIONICS Advanced Power Technology
7 1004MP RF Power Transistors: AVIONICS Advanced Power Technology
8 1011LD110 RF Power Transistors: AVIONICS Advanced Power Technology
9 1011LD200 RF Power Transistors: AVIONICS Advanced Power Technology
10 1011LD300 RF Power Transistors: AVIONICS Advanced Power Technology
11 1015MP RF Power Transistors: AVIONICS Advanced Power Technology
12 1035MP RF Power Transistors: AVIONICS Advanced Power Technology
13 10500 RF Power Transistors: AVIONICS Advanced Power Technology
14 10502 RF Power Transistors: AVIONICS Advanced Power Technology
15 1075MP RF Power Transistors: AVIONICS Advanced Power Technology
16 1090MP RF Power Transistors: AVIONICS Advanced Power Technology
17 1150MP RF Power Transistors: AVIONICS Advanced Power Technology
18 1N3481 Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz Motorola
19 1N3482 Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz Motorola
20 23Z247SMD 2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers Pulse Engineering
21 2N3137 Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier SGS-ATES
22 2N3375 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
23 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
24 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
25 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
26 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
27 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
28 2N3924 NPN silicon RF power transistor Motorola
29 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
30 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola


Datasheets found :: 3349
Page: | 1 | 2 | 3 | 4 | 5 |



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