No. |
Part Name |
Description |
Manufacturer |
1 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
2 |
0912-25 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
3 |
0912-45 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
4 |
0912-7 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
5 |
1000MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
6 |
1002MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
7 |
1004MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
8 |
1011LD110 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
9 |
1011LD200 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
10 |
1011LD300 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
11 |
1015MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
12 |
1035MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
13 |
10500 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
14 |
10502 |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
15 |
1075MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
16 |
1090MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
17 |
1150MP |
RF Power Transistors: AVIONICS |
Advanced Power Technology |
18 |
1N3481 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
19 |
1N3482 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
20 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
21 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
22 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
23 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
24 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
25 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
26 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
27 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
28 |
2N3924 |
NPN silicon RF power transistor |
Motorola |
29 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
30 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
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