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Datasheets for RF P

Datasheets found :: 3567
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 2N3375 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
32 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
33 2N3553 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
34 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
35 2N3632 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
36 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
37 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
38 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
39 2N3733 10W, 400-Mc Silicon NPN Overlay RF Power Transistor RCA Solid State
40 2N3866 Silicon NPN Overlay RF Power Transistor RCA Solid State
41 2N3924 NPN silicon RF power transistor Motorola
42 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
43 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
44 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
45 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
46 2N3948 NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment Motorola
47 2N3950 NPN silicon RF power transistor designed for high-power RF amplifier applications Motorola
48 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
49 2N4030 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
50 2N4031 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
51 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
52 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
53 2N4428 NPN silicon RF power transistor 0.75W - 500MHz Motorola
54 2N4429 NPN SILICON RF POWER TRANSISTOR Advanced Semiconductor
55 2N4429 RF Power transistor Texas Instruments
56 2N4430 RF Power transistor Texas Instruments
57 2N4440 Silicon NPN Overlay RF Power Transistor RCA Solid State
58 2N4932 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
59 2N4933 Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction RCA Solid State
60 2N4957 RF PNP transistor for UHF low noise amplifier IPRS Baneasa


Datasheets found :: 3567
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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