| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BRF5300 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 2 |
BRF5301 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 3 |
BRF53010 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 4 |
BRF53012 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 5 |
BRF5301J |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 6 |
BRF5302 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 7 |
BRF5304 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 8 |
BRF5304SL |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 9 |
BRF5304SM |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 10 |
BRF5305 |
NPN low noise silicon microwave transistor. |
BOPOLARICS |
| 11 |
IRF530 |
14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs |
Fairchild Semiconductor |
| 12 |
IRF530 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 13 |
IRF530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 14 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 15 |
IRF530 |
Trans MOSFET N-CH 100V 14A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 16 |
IRF530 |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 17 |
IRF530 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 18 |
IRF530 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 19 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 20 |
IRF530 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 14A |
Siliconix |
| 21 |
IRF530 |
N-CHANNEL 100V - 0.115 OHM - 14A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 22 |
IRF530 |
100 V,power field effect transistor |
TRANSYS Electronics Limited |
| 23 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
TRSYS |
| 24 |
IRF530-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 25 |
IRF5305 |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 26 |
IRF5305 |
Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 27 |
IRF5305L |
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 28 |
IRF5305LPBF |
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 29 |
IRF5305PBF |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 30 |
IRF5305S |
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| | | |
