| No. |
Part Name |
Description |
Manufacturer |
| 61 |
IRF531 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 62 |
IRF531 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 63 |
IRF531 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 64 |
IRF531 |
Trans MOSFET N-CH 80V 14A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 65 |
IRF531 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 66 |
IRF531 |
N-channel MOSFET, 80V, 14A |
SGS Thomson Microelectronics |
| 67 |
IRF531 |
N-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
| 68 |
IRF531F1 |
N-channel MOSFET, 80V, 9A |
SGS Thomson Microelectronics |
| 69 |
IRF531FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 70 |
IRF532 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 71 |
IRF532 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 72 |
IRF532 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 73 |
IRF532 |
Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 74 |
IRF532 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 75 |
IRF532 |
N-channel MOSFET, 100V, 12A |
SGS Thomson Microelectronics |
| 76 |
IRF532F1 |
N-channel MOSFET, 100V, 8A |
SGS Thomson Microelectronics |
| 77 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 78 |
IRF532FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 79 |
IRF533 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 80 |
IRF533 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 81 |
IRF533 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
| 82 |
IRF533 |
Trans MOSFET N-CH 80V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 83 |
IRF533 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 84 |
IRF533 |
N-channel MOSFET, 80V, 12A |
SGS Thomson Microelectronics |
| 85 |
IRF533F1 |
N-channel MOSFET, 80V, 8A |
SGS Thomson Microelectronics |
| 86 |
IRF533FI |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 87 |
MRF531 |
NPN silicon high frequency transistor |
Motorola |
| 88 |
MRF534 |
PNP silicon high-frequency transistor |
Motorola |
| 89 |
MRF536 |
PNP silicon high-frequency transistor |
Motorola |
| 90 |
PB-IRF5305S |
Leaded -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
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