| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRF830 |
POWER MOSFET |
BayLinear |
| 2 |
IRF830 |
4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
Fairchild Semiconductor |
| 3 |
IRF830 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 4 |
IRF830 |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 5 |
IRF830 |
4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET |
Intersil |
| 6 |
IRF830 |
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 7 |
IRF830 |
Power Field Effect Transistor |
ON Semiconductor |
| 8 |
IRF830 |
PowerMOS transistor Avalanche energy rated |
Philips |
| 9 |
IRF830 |
N-Channel Power MOSFET |
Samsung Electronic |
| 10 |
IRF830 |
N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 11 |
IRF830 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
| 12 |
IRF830 |
N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFET |
ST Microelectronics |
| 13 |
IRF830 |
500 V,power field effect transistor |
TRANSYS Electronics Limited |
| 14 |
IRF830 |
N-CHANNEL ENHANCEMENT MODE |
TRSYS |
| 15 |
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS |
ON Semiconductor |
| 16 |
IRF8301M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 17 |
IRF8301MTRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. |
International Rectifier |
| 18 |
IRF8302M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
| 19 |
IRF8302MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. |
International Rectifier |
| 20 |
IRF8304M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
| 21 |
IRF8304MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. |
International Rectifier |
| 22 |
IRF8306M |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 23 |
IRF8306MTR1PBF |
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. |
International Rectifier |
| 24 |
IRF8308M |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
| 25 |
IRF8308MTR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. |
International Rectifier |
| 26 |
IRF830A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 27 |
IRF830AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 28 |
IRF830APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 29 |
IRF830AS |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 30 |
IRF830AS |
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| | | |
