| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF830B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
| 32 |
IRF830FI |
Trans MOSFET 500V 3A 3-Pin(3+Tab) ISOWATT220 |
New Jersey Semiconductor |
| 33 |
IRF830L |
HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A |
International Rectifier |
| 34 |
IRF830PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 35 |
IRF830R |
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-262 |
New Jersey Semiconductor |
| 36 |
IRF830S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 37 |
IRF830STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 38 |
IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 39 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 40 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 41 |
IRF831 |
Trans MOSFET N-CH 450V 4.5A |
New Jersey Semiconductor |
| 42 |
IRF831 |
N-Channel Power MOSFET |
Samsung Electronic |
| 43 |
IRF831 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.5A |
Siliconix |
| 44 |
IRF8313 |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 45 |
IRF8313PBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 46 |
IRF8313TRPBF |
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 47 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 48 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 49 |
IRF832 |
Trans MOSFET N-CH 500V 4A |
New Jersey Semiconductor |
| 50 |
IRF832 |
N-Channel Power MOSFET |
Samsung Electronic |
| 51 |
IRF832 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.0A |
Siliconix |
| 52 |
IRF8327S |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
| 53 |
IRF8327STR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. |
International Rectifier |
| 54 |
IRF833 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 55 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 56 |
IRF833 |
Trans MOSFET N-CH 450V 4A |
New Jersey Semiconductor |
| 57 |
IRF833 |
N-Channel Power MOSFET |
Samsung Electronic |
| 58 |
IRF833 |
MOSPOWER N-Channel Enhancement Mode Transistor 450V 4.0A |
Siliconix |
| 59 |
MBRF835CT |
Discrete Devices -Diode-Schottky |
Taiwan Semiconductor |
| 60 |
MRF837 |
NPN SILICON RF LOW POWER TRANSISTOR |
Advanced Semiconductor |
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