| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AD5535 |
32-Channel, 14-Bit DAC with Fullscale Output Voltage Programmable from 50 V to 200 V |
Analog Devices |
| 2 |
AD5535B |
32-Channel, 14-Bit DAC with Full-Scale Output Voltage Programmable from 50 V to 200 V |
Analog Devices |
| 3 |
ADN2847 |
Anyrate from 50 Mbps to 3.3 Gbps, Dual-loop Control Laser Diode Driver IC |
Analog Devices |
| 4 |
AN87C196CB |
Advanced 16-bit CHMOS microcontroller with integrated CAN 2.0, EPROM 56K, reg RAM 1.5K, code RAM 512b, address space 1 Mbyte, 16 MHz |
Intel |
| 5 |
AN87C196CB-20 |
Advanced 16-bit CHMOS microcontroller with integrated CAN 2.0, EPROM 56K, reg RAM 1.5K, code RAM 512b, address space 1 Mbyte, 20 MHz |
Intel |
| 6 |
AS87C196CB |
Advanced 16-bit CHMOS microcontroller with integrated CAN 2.0, EPROM 56K, reg RAM 1.5K, code RAM 512b, address space 16 Mbyte, 16 MHz |
Intel |
| 7 |
AS87C196CB-20 |
Advanced 16-bit CHMOS microcontroller with integrated CAN 2.0, EPROM 56K, reg RAM 1.5K, code RAM 512b, address space 16 Mbyte, 20 MHz |
Intel |
| 8 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 9 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 10 |
BFQ75 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) |
Siemens |
| 11 |
BFR93AW |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 12 |
BZX29 |
Silicon Planar Voltage Reference diodes, zener voltage from 5.6V to 56V |
Philips |
| 13 |
C122E |
8A silicon controlled rectifier. Vrrom 500V. |
General Electric Solid State |
| 14 |
C122F |
8A silicon controlled rectifier. Vrrom 50V. |
General Electric Solid State |
| 15 |
FPL101 |
Dual interface element from 5V to 12V with an inverting and a non inverting input each |
AEG-TELEFUNKEN |
| 16 |
FPL103 |
Dual interface element from 5V to 12V with an inverting and a non inverting input each |
AEG-TELEFUNKEN |
| 17 |
M240 |
ROM 512x8 bit |
SGS-ATES |
| 18 |
M271 |
PROM 512x8 bit |
SGS-ATES |
| 19 |
PSD302-B-15J |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 150ns |
WSI |
| 20 |
PSD302-B-15L |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 150ns |
WSI |
| 21 |
PSD302-B-15M |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 150ns |
WSI |
| 22 |
PSD302-B-15U |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 150ns |
WSI |
| 23 |
PSD302-B-70J |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 70ns |
WSI |
| 24 |
PSD302-B-70L |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 70ns |
WSI |
| 25 |
PSD302-B-70M |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 70ns |
WSI |
| 26 |
PSD302-B-70U |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 70ns |
WSI |
| 27 |
PSD302-B-90JI |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 90ns |
WSI |
| 28 |
PSD302-B-90LI |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 90ns |
WSI |
| 29 |
PSD302-B-90MI |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 90ns |
WSI |
| 30 |
PSD302-B-90UI |
Programmable system device, 18 PLD inputs, EPROM 512K, SRAM=16K, bus width x8 or x16, 5V, 90ns |
WSI |
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