| No. |
Part Name |
Description |
Manufacturer |
| 31 |
PSD302R-B-15J |
Programmable system device, 18 PLD inputs, EPROM 512K, bus width x8 or x16, 5V, 150ns |
WSI |
| 32 |
PSD302R-B-70J |
Programmable system device, 18 PLD inputs, EPROM 512K, bus width x8 or x16, 5V, 70ns |
WSI |
| 33 |
PSD302R-B-90JI |
Programmable system device, 18 PLD inputs, EPROM 512K, bus width x8 or x16, 5V, 90ns |
WSI |
| 34 |
Q62702-F1144 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 35 |
Q62702-F1489 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 36 |
Q62702-F803 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) |
Siemens |
| 37 |
ST662 |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
ST Microelectronics |
| 38 |
ST662A |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
SGS Thomson Microelectronics |
| 39 |
ST662AB |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
ST Microelectronics |
| 40 |
ST662ABD |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
SGS Thomson Microelectronics |
| 41 |
ST662ABD-TRY |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
ST Microelectronics |
| 42 |
ST662ABN |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
SGS Thomson Microelectronics |
| 43 |
ST662AC |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
ST Microelectronics |
| 44 |
ST662ACD |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
SGS Thomson Microelectronics |
| 45 |
ST662ACN |
DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY |
SGS Thomson Microelectronics |
| 46 |
T2300F |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V. |
General Electric Solid State |
| 47 |
T2301F |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 50 V. |
General Electric Solid State |
| 48 |
T2302F |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 50 V. |
General Electric Solid State |
| 49 |
T2800E |
High voltage, 8-A silicon triac. Vdrom 500 V. |
General Electric Solid State |
| 50 |
T2802E |
High voltage, 8-A silicon triac. Vdrom 500 V. |
General Electric Solid State |
| 51 |
W27E040,P |
EPROM 512Kx8 |
Winbond Electronics |
| 52 |
X25043 |
Programmable Watchdog Supervisory E2PROM 512 x 8 Bit |
Xicor |
| 53 |
Z86E0308PSC |
CMOS Z8 OTP microcontroller. ROM 512 Kbytes, RAM 61 Kbytes, speed 8 MHz, 4.5 V to 5.5 V |
Zilog |
| 54 |
Z86E0308SSC |
CMOS Z8 OTP microcontroller. ROM 512 Kbytes, RAM 61 Kbytes, speed 8 MHz, 4.5 V to 5.5 V |
Zilog |
| 55 |
Z86E0612SSC |
CMOS Z8 OTP microcontroller. ROM 512 Kbytes, RAM 61 Kbytes, speed 12 MHz, 4.5 V to 5.5 V |
Zilog |
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