| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
| 2 |
1S920 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 3 |
1S920 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 4 |
1S921 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 5 |
1S921 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 6 |
1S922 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 7 |
1S922 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 8 |
1S923 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 9 |
1S923 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 10 |
2-AA118 |
Universal germanium PIN diode with high closing voltage - pair |
Felvezeto Katalogus 1966 |
| 11 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 12 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 13 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 14 |
2N3962 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
| 15 |
2N3963 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
| 16 |
2N3964 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
| 17 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 18 |
2SD1753 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 19 |
2SD1776 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 20 |
2SD2486 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 21 |
2SD2527 |
Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
Panasonic |
| 22 |
2SD621 |
For H-Deflection Output with High Voltage |
SANYO |
| 23 |
2SD995 |
NPN TRIPLE DIFFUSED MESA TYPE SILICON TRANSISTOR FOR H-DEFLECTION OUTPUT WITH HIGH VOLTAGE |
SANYO |
| 24 |
390-01 |
Motorola case, dimensions, similar with HLP-50 |
Motorola |
| 25 |
393-01 |
Motorola case, dimensions, similar with HLP-11 |
Motorola |
| 26 |
397-01 |
Motorola case, dimensions, similar with HPA-1 |
Motorola |
| 27 |
402-01 |
Motorola case, dimensions, similar with HLP-15M |
Motorola |
| 28 |
402A-01 |
Motorola case, dimensions, similar with HLP-19 |
Motorola |
| 29 |
56-245 |
Spacer disc made of insulating material, for transistors with housing TO-5, TO-12, TO-33, TO-39 |
VALVO |
| 30 |
56-246 |
Spacer disc made of insulating material, for transistors with housing TO-18, TO-72 |
VALVO |
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