| No. |
Part Name |
Description |
Manufacturer |
| 121 |
B3540K4 |
N-channel DMOS FET switch with high gain level shifter |
BayLinear |
| 122 |
B360D |
Quadruple transistor array without and with heat sink, possibly equivalent TPQ2222 |
RFT |
| 123 |
B360E |
Quadruple transistor array without and with heat sink, possibly equivalent TPQ2221 |
RFT |
| 124 |
B360K |
Quadruple transistor array without and with heat sink, possibly equivalent TPQ3724 |
RFT |
| 125 |
B380D |
Quadruple transistor array without and with heat sink, possibly equivalent TPQ3725 |
RFT |
| 126 |
B380E |
Quadruple transistor array without and with heat sink, possibly equivalent TPQ3725 |
RFT |
| 127 |
B380K |
Quadruple transistor array without and with heat sink, possibly equivalent TPQ3725 |
RFT |
| 128 |
BA187 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 129 |
BA187 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 130 |
BA188 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 131 |
BA188 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 132 |
BA189 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 133 |
BA189 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 134 |
BA190 |
Glass passivated silicon diode with high-break-off voltage for general purpoe application |
Texas Instruments |
| 135 |
BA190 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 136 |
BAY17 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 137 |
BAY18 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 138 |
BAY19 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 139 |
BAY20 |
Glass passivated silicon diode with high breaking voltage |
Texas Instruments |
| 140 |
BAY92 |
Diffused silicon switching diode with high reverse voltage |
AEG-TELEFUNKEN |
| 141 |
BC110 |
NPN Silicon Transistor for AF amplifier stages with high operating voltage |
Siemens |
| 142 |
BCM5665 |
StrataXGS® Multilayer Switch with HiGig™ |
Broadcom |
| 143 |
BCM5690 |
12-Port Multilayer Gigabit Ethernet Switch with HiGig™ stacking |
Broadcom |
| 144 |
BCM5690 |
12-Port Multilayer Gigabit Ethernet Switch with HiGig™ stacking |
Broadcom |
| 145 |
BCM5690 |
12-Port Multilayer Gigabit Ethernet Switch with HiGig™ stacking |
Broadcom |
| 146 |
BCM5692 |
12-Port Layer 2+ Gigabit Ethernet Switch with HiGig™ stacking |
Broadcom |
| 147 |
BCM5695 |
12-Port Multilayer Gigabit Ethernet Switch with HiGig+™ stacking |
Broadcom |
| 148 |
BCM5697 |
12-Port Layer 2+ Gigabit Ethernet Switch with HiGig+™ stacking |
Broadcom |
| 149 |
BCM7501 |
Single-Link DVI Transmitter with HDCP |
Broadcom |
| 150 |
BCM8021 |
4-Channel Multirate 1.0-3.2-Gbps Transceiver with High-Speed Redundancy |
Broadcom |
| | | |
