No. |
Part Name |
Description |
Manufacturer |
1 |
1N3909 |
50 V, 30 A fast recovery rectifier |
Solid State Devices Inc |
2 |
1N3910 |
100 V, 30 A fast recovery rectifier |
Solid State Devices Inc |
3 |
1N3911 |
200 V, 30 A fast recovery rectifier |
Solid State Devices Inc |
4 |
1N3912 |
300 V, 30 A fast recovery rectifier |
Solid State Devices Inc |
5 |
1N3913 |
400 V, 30 A fast recovery rectifier |
Solid State Devices Inc |
6 |
1N5365B |
36 V, 30 mA, 5 W glass passivated zener diode |
Fagor |
7 |
1N5366B |
39 V, 30 mA, 5 W glass passivated zener diode |
Fagor |
8 |
1N5367B |
43 V, 30 mA, 5 W glass passivated zener diode |
Fagor |
9 |
1PS66SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Nexperia |
10 |
1PS66SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
11 |
1PS66SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Philips |
12 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Nexperia |
13 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
NXP Semiconductors |
14 |
1PS66SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Philips |
15 |
1PS66SB82 |
1PS66SB82; 1PS88SB82; 15 V, 30 mA low Cd Schottky barrier diodes |
Philips |
16 |
1PS76SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Nexperia |
17 |
1PS76SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
18 |
1PS79SB17 |
4 V, 30 mA low capacitance Schottky barrier diode |
Nexperia |
19 |
1PS79SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
20 |
1PS79SB17 |
1PS76SB17; 1PS79SB17; 4 V, 30 mA low C_d Schottky barrier diode |
Philips |
21 |
1PS79SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Philips |
22 |
1PS88SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
Nexperia |
23 |
1PS88SB82 |
15 V, 30 mA low Cd Schottky barrier diodes |
NXP Semiconductors |
24 |
2N3771 |
50 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
25 |
2N3772 |
100 V, 30 A, 150 W, NPN silicon power transistor |
Texas Instruments |
26 |
2N5301 |
40 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
27 |
2N5302 |
60 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
28 |
2N5303 |
80 V, 30 A, 200 W, NPN silicon power transistor |
Texas Instruments |
29 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
30 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
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