No. |
Part Name |
Description |
Manufacturer |
31 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
32 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
33 |
2N5330 |
150 V, 30 A high speed NPN transistor |
Solid State Devices Inc |
34 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
35 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
36 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
37 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
38 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
39 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
40 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
41 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
Nexperia |
42 |
2N7002 |
60 V, 300 mA N-channel Trench MOSFET |
NXP Semiconductors |
43 |
2N7002BKS |
60 V, 300 mA dual N-channel Trench MOSFET |
Nexperia |
44 |
2N7002BKS |
60 V, 300 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
45 |
2SC5245A |
RF Transistor, 10V, 30mA, fT=8GHz, NPN Single MCP |
ON Semiconductor |
46 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
47 |
2SJ553STR |
P-channel MOSFET for high speed power switching, 60V, 30A |
Renesas |
48 |
2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
49 |
2SK241O |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
50 |
2SK241Y |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
51 |
2SK3703 |
N-Channel Power MOSFET, 60V, 30A, 26mOhm, TO-220F-3SG |
ON Semiconductor |
52 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
53 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
54 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
55 |
ADG511 |
�5V, 30 Ohm, Quad SPST (4NC) Switch |
Analog Devices |
56 |
ADG511ABR-REEL |
±5V, 30 Ohm, Quad SPST (4NC) Switch |
Analog Devices |
57 |
ADG511ABR-REEL7 |
±5V, 30 Ohm, Quad SPST (4NC) Switch |
Analog Devices |
58 |
ADG511BCHIPS |
±5V, 30 Ohm, Quad SPST (4NC) Switch |
Analog Devices |
59 |
ADP7102 |
20 V, 300 mA, Low Noise, CMOS LDO |
Analog Devices |
60 |
AMD-K6_300AFR |
Processor AMD-K6 family, operating voltage=2.1V�2.3V, 300MHz |
Advanced Micro Devices |
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