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Datasheets for MODE

Datasheets found :: 23090
Page: | 333 | 334 | 335 | 336 | 337 | 338 | 339 | 340 | 341 |
No. Part Name Description Manufacturer
10081 IRF630 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
10082 IRF630 MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A Siliconix
10083 IRF631 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
10084 IRF631 MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A Siliconix
10085 IRF632 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
10086 IRF632 MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A Siliconix
10087 IRF633 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
10088 IRF633 MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A Siliconix
10089 IRF640 MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A Siliconix
10090 IRF640-D Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
10091 IRF641 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
10092 IRF641 MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A Siliconix
10093 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
10094 IRF642 MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A Siliconix
10095 IRF643 MOSPOWER N-Channel Enhancement Mode Transistor 150V 16A Siliconix
10096 IRF710 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
10097 IRF711 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
10098 IRF712 MOSPOWER N-Channel Enhancement Mode Transistor 400V 1.5A Siliconix
10099 IRF713 MOSPOWER N-Channel Enhancement Mode Transistor 350V 1.5A Siliconix
10100 IRF720 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
10101 IRF720 MOSPOWER N-Channel Enhancement Mode Transistor 400V 3A Siliconix
10102 IRF721 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
10103 IRF721 MOSPOWER N-Channel Enhancement Mode Transistor 350V 3A Siliconix
10104 IRF722 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
10105 IRF722 MOSPOWER N-Channel Enhancement Mode Transistor 400V 2.5A Siliconix
10106 IRF723 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
10107 IRF723 MOSPOWER N-Channel Enhancement Mode Transistor 350V 2.5A Siliconix
10108 IRF730 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
10109 IRF730 MOSPOWER N-Channel Enhancement Mode Transistor 400V 5.5A Siliconix
10110 IRF731 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State


Datasheets found :: 23090
Page: | 333 | 334 | 335 | 336 | 337 | 338 | 339 | 340 | 341 |



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