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Datasheets for MODE

Datasheets found :: 23090
Page: | 330 | 331 | 332 | 333 | 334 | 335 | 336 | 337 | 338 |
No. Part Name Description Manufacturer
9991 IRF440 MOSPOWER N-Channel Enhancement Mode Transistor 500V 8A Siliconix
9992 IRF441 MOSPOWER N-Channel Enhancement Mode Transistor 450V 8A Siliconix
9993 IRF442 MOSPOWER N-Channel Enhancement Mode Transistor 500V 7A Siliconix
9994 IRF443 MOSPOWER N-Channel Enhancement Mode Transistor 450V 7A Siliconix
9995 IRF450 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
9996 IRF450 MOSPOWER N-Channel Enhancement Mode Transistor 500V 13A Siliconix
9997 IRF451 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 13A. General Electric Solid State
9998 IRF451 MOSPOWER N-Channel Enhancement Mode Transistor 450V 13A Siliconix
9999 IRF452 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
10000 IRF452 MOSPOWER N-Channel Enhancement Mode Transistor 500V 12A Siliconix
10001 IRF453 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
10002 IRF453 MOSPOWER N-Channel Enhancement Mode Transistor 450V 12A Siliconix
10003 IRF460 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS SemeLAB
10004 IRF510 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
10005 IRF510 MOSPOWER N-Channel Enhancement Mode Transistor 100V 4A Siliconix
10006 IRF510 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
10007 IRF511 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
10008 IRF511 MOSPOWER N-Channel Enhancement Mode Transistor 60V 4A Siliconix
10009 IRF511 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
10010 IRF512 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
10011 IRF512 MOSPOWER N-Channel Enhancement Mode Transistor 100V 3.5A Siliconix
10012 IRF512 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
10013 IRF513 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 3.5A. General Electric Solid State
10014 IRF513 MOSPOWER N-Channel Enhancement Mode Transistor 60V 3.5A Siliconix
10015 IRF513 N-Channel Enhancement-Mode Vertical DMOS Power FETs Supertex Inc
10016 IRF520 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
10017 IRF520 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
10018 IRF520 MOSPOWER N-Channel Enhancement Mode Transistor 100V 8A Siliconix
10019 IRF520 N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs Supertex Inc
10020 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics


Datasheets found :: 23090
Page: | 330 | 331 | 332 | 333 | 334 | 335 | 336 | 337 | 338 |



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