| No. |
Part Name |
Description |
Manufacturer |
| 10111 |
BDY20 |
NPN Silicon Power Transistor for audio amplifiers and switching applications |
Newmarket Transistors NKT |
| 10112 |
BDY34 |
Silicon NPN epitaxial planar transistor for AF power stages, power amplifier stages and relaise-driver stages |
AEG-TELEFUNKEN |
| 10113 |
BDY39 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 10114 |
BDY39 paired |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 10115 |
BDY39-4 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 10116 |
BDY39-6 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 10117 |
BELASIGNA200 |
Programmable, Mixed-Signal Digital Signal Processor for Speech and Audio Applications |
ON Semiconductor |
| 10118 |
BELASIGNA250 |
Programmable Audio Processing System for Ultra-Low-Power Embedded and Portable Digital Audio |
ON Semiconductor |
| 10119 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 10120 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 10121 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 10122 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 10123 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 10124 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 10125 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 10126 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 10127 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 10128 |
BF137 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 10129 |
BF155 |
Epitaxial planar NPN transistor designed for UHF amplifier and mixer-oscillator applications up to 900MHz |
SGS-ATES |
| 10130 |
BF158 |
Silicon Planar NPN RF transistor designed for use as IF amplifier in TV receivers |
SGS-ATES |
| 10131 |
BF158 |
Transistor for IF amplifiers |
SGS-ATES |
| 10132 |
BF160 |
Silicon Planar NPN transistor - IF amplifier for AM/FM radios |
SGS-ATES |
| 10133 |
BF160 |
Transistor for IF amplifiers |
SGS-ATES |
| 10134 |
BF161 |
Epitaxial planar NPN transistor, intended for UHF amplifier, mixer and oscillator applications |
SGS-ATES |
| 10135 |
BF167 |
Transistor for IF amplifiers |
SGS-ATES |
| 10136 |
BF173 |
Transistor for IF amplifiers |
SGS-ATES |
| 10137 |
BF198 |
NPN Silicon RF Transistor for variable-gain IF amplifier stages |
Siemens |
| 10138 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 10139 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 10140 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
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