| No. |
Part Name |
Description |
Manufacturer |
| 10141 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 10142 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 10143 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
| 10144 |
BF251 |
Transistor for IF amplifiers |
SGS-ATES |
| 10145 |
BF257 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 10146 |
BF257 |
Transistor for high voltage amplifiers |
SGS-ATES |
| 10147 |
BF258 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 10148 |
BF258 |
Transistor for high voltage amplifiers |
SGS-ATES |
| 10149 |
BF259 |
NPN silicon epitaxial-planar transistor for video power amplifier (in german) |
ITT Semiconductors |
| 10150 |
BF259 |
Transistor for high voltage amplifiers |
SGS-ATES |
| 10151 |
BF271 |
Transistor for IF amplifiers |
SGS-ATES |
| 10152 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 10153 |
BF272A |
Transistor for TV TUNERS - amplifiers-mixer/oscillators |
SGS-ATES |
| 10154 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 10155 |
BF274 |
Transistor for IF amplifiers |
SGS-ATES |
| 10156 |
BF288 |
Transistor for IF amplifiers |
SGS-ATES |
| 10157 |
BF316A |
Epitaxial planar PNP transistor designed for use as oscillator-mixer in TV tuners |
SGS-ATES |
| 10158 |
BF316A |
Transistor for TV TUNERS - amplifiers-mixer/oscillators |
SGS-ATES |
| 10159 |
BF324 |
Epitaxial planar PNP transistor, intended for common base input stages in FM tuners |
SGS-ATES |
| 10160 |
BF410 |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 10161 |
BF410A |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 10162 |
BF410B |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 10163 |
BF410C |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 10164 |
BF410D |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
| 10165 |
BF414 |
Epitaxial planar PNP transistor, intended for use as common base amplifier in the VHF range |
SGS-ATES |
| 10166 |
BF414 |
NPN Silicon RF Transistor (For low-noise, common base VHF and FM stages) |
Siemens |
| 10167 |
BF454 |
Transistor for IF amplifiers |
SGS-ATES |
| 10168 |
BF455 |
Transistor for IF amplifiers |
SGS-ATES |
| 10169 |
BF457 |
Silicon NPN Epitaxial-Planar Transistor for power video amplifier (in german) |
ITT Semiconductors |
| 10170 |
BF457 |
NPN Silicon RF planar transistor for video and AF output stages |
Siemens |
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