| No. |
Part Name |
Description |
Manufacturer |
| 10111 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 10112 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 10113 |
QM100HA-H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10114 |
QM10HA-HB |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10115 |
QM150HA-H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10116 |
QSL9 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 10117 |
QST6 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10118 |
QST7 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10119 |
QSX1 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10120 |
QSX5 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10121 |
QSX6 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10122 |
QSX7 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 10123 |
RA0320R |
20A 30V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 10124 |
RA0520R |
20A 50V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 10125 |
RA120R |
20A 100V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 10126 |
RA220R |
20A 200V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 10127 |
RECOMMENDATIONS |
RF Silicon bipolar transistors general operational recommendations |
Philips |
| 10128 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 10129 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 10130 |
RF3241 |
Quad Band GSM / GPRS / Polar EDGE Transmit Module with 6 RF Switch Ports |
Qorvo |
| 10131 |
RGBC40M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A) |
International Rectifier |
| 10132 |
RM100CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10133 |
RM15TA-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10134 |
RM200DA-20F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10135 |
RM200DA-24F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10136 |
RM20DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10137 |
RM20TPM-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10138 |
RM20TPM-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10139 |
RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10140 |
RM30TA-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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