| No. |
Part Name |
Description |
Manufacturer |
| 10021 |
P6KE200 |
162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10022 |
P6KE200A |
171.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10023 |
P6KE220 |
175.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10024 |
P6KE220A |
185.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10025 |
P6KE250 |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10026 |
P6KE250A |
202.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10027 |
P6KE300 |
243.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10028 |
P6KE300A |
256.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10029 |
P6KE350 |
284.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10030 |
P6KE350A |
300.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10031 |
P6KE400 |
324.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10032 |
P6KE400A |
342.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10033 |
P6KE440 |
356.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10034 |
P6KE440A |
376.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 10035 |
P6SMB220CA |
SMD Transient Suppressor Single: 600W Bi-polar |
Central Semiconductor |
| 10036 |
PAWOD24 |
Vertically Polarized Omni Directional Antennas |
etc |
| 10037 |
PCP1103 |
Bipolar Transistor, -30V, -1.5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 10038 |
PH081O-35 |
Wireless Bipolar Power Transistor, 35W 850 - 960 MHz |
Tyco Electronics |
| 10039 |
PH1516-10 |
1450-1600 MHz,10 W, wireless bipolar power transistor |
MA-Com |
| 10040 |
PH1516-100 |
1450-1550 MHz,100 W, wireless bipolar power transistor |
MA-Com |
| 10041 |
PH1516-100 |
Wireless Bipolar Power Transistor, 1 OOW 1450 - 1550 MHz |
Tyco Electronics |
| 10042 |
PH1516-60 |
Wireless Bipolar Power Transistor |
MA-Com |
| 10043 |
PH1617-2 |
1600-1700 MHz,2 W, wireless bipolar power transistor |
MA-Com |
| 10044 |
PH1617-2 |
Wireless Bipolar Power Transistor, 2W 1.6 - 1.7 GHz |
Tyco Electronics |
| 10045 |
PH1617-30 |
Wireless Bipolar Power Transistor, 30W 1.6-1.7 GHz |
MA-Com |
| 10046 |
PH1819-10 |
1780-1900 MHz,10 W, wireless bipolar power transistor |
MA-Com |
| 10047 |
PH1819-10 |
Wireless Bipolar Power Transistor, 1 OW 1.78 - 1.90 GHz |
Tyco Electronics |
| 10048 |
PH1819-15N |
1780-1900 MHz,15 W, wireless bipolar power transistor |
MA-Com |
| 10049 |
PH1819-15N |
Wireless Bipolar Power Transistor, 15W . 1.78 - 1.90 GHz |
Tyco Electronics |
| 10050 |
PH1819-2 |
1780-1900 MHz,2 W, wireless bipolar power transistor |
MA-Com |
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