| No. |
Part Name |
Description |
Manufacturer |
| 9961 |
OP275GSR |
Dual Bipolar/JFET, Audio Operational Amplifier |
Analog Devices |
| 9962 |
OPA1602 |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp |
Texas Instruments |
| 9963 |
OPA1602AID |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp 8-SOIC -40 to 85 |
Texas Instruments |
| 9964 |
OPA1602AIDGK |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp 8-VSSOP -40 to 85 |
Texas Instruments |
| 9965 |
OPA1602AIDGKR |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp 8-VSSOP -40 to 85 |
Texas Instruments |
| 9966 |
OPA1602AIDR |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp 8-SOIC -40 to 85 |
Texas Instruments |
| 9967 |
OPA1604 |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp |
Texas Instruments |
| 9968 |
OPA1604AID |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp 14-SOIC -40 to 85 |
Texas Instruments |
| 9969 |
OPA1604AIDR |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp 14-SOIC -40 to 85 |
Texas Instruments |
| 9970 |
OPA1604AIPW |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp 14-TSSOP -40 to 85 |
Texas Instruments |
| 9971 |
OPA1604AIPWR |
OPA1602, OPA1604 SoundPlus High-Performance, Bipolar-Input Audio Op Amp 14-TSSOP -40 to 85 |
Texas Instruments |
| 9972 |
OPA1622 |
SoundPlus? Audio Operational Amplifier with High Performance, Low THD+N and Bipolar Input 10-VSON -40 to 125 |
Texas Instruments |
| 9973 |
OPA1622IDRCR |
SoundPlus? Audio Operational Amplifier with High Performance, Low THD+N and Bipolar Input 10-VSON -40 to 125 |
Texas Instruments |
| 9974 |
OPA1622IDRCT |
SoundPlus? Audio Operational Amplifier with High Performance, Low THD+N and Bipolar Input 10-VSON -40 to 125 |
Texas Instruments |
| 9975 |
P4KE100 |
81.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9976 |
P4KE100A |
85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9977 |
P4KE110 |
89.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9978 |
P4KE110A |
94.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9979 |
P4KE120 |
97.20V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9980 |
P4KE120A |
102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9981 |
P4KE130 |
105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9982 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9983 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9984 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9985 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9986 |
P4KE160A |
136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9987 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9988 |
P4KE170A |
145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9989 |
P4KE180 |
146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 9990 |
P4KE180A |
154.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
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