| No. |
Part Name |
Description |
Manufacturer |
| 10201 |
PNA4608M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10202 |
PNA4610M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10203 |
PNA4611 |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10204 |
PNA4620M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10205 |
PNA4S01M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10206 |
PNA4S02M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10207 |
PNA4S03M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10208 |
PNA4S04M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10209 |
PNA4S11M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10210 |
PNA4S12M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10211 |
PNA4S13M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10212 |
PNA4S14M |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10213 |
PNZ7103 |
Bipolar Integrated Circuit with Photodetection Function |
Panasonic |
| 10214 |
PPNGZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 10215 |
PPNHZ52F120A |
Insulated Gate Bipolar Transistor |
Microsemi |
| 10216 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 10217 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 10218 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 10219 |
QM100HA-H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10220 |
QM10HA-HB |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10221 |
QM150HA-H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10222 |
QSL9 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 10223 |
QST6 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10224 |
QST7 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10225 |
QSX1 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10226 |
QSX5 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10227 |
QSX6 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 10228 |
QSX7 |
Transistors > Complex Bipolar Transistors |
ROHM |
| 10229 |
RA0320R |
20A 30V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 10230 |
RA0520R |
20A 50V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
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