| No. |
Part Name |
Description |
Manufacturer |
| 10231 |
RA120R |
20A 100V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 10232 |
RA220R |
20A 200V Silicon Rectifier Diode, reverse polarity |
IPRS Baneasa |
| 10233 |
RECOMMENDATIONS |
RF Silicon bipolar transistors general operational recommendations |
Philips |
| 10234 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 10235 |
RF142 |
Heterojunction Bipolar Transistor Power Amplifier Dual-Band Controller for GSM and PCS Applications |
Conexant |
| 10236 |
RF3241 |
Quad Band GSM / GPRS / Polar EDGE Transmit Module with 6 RF Switch Ports |
Qorvo |
| 10237 |
RGBC40M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A) |
International Rectifier |
| 10238 |
RM100CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10239 |
RM15TA-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10240 |
RM200DA-20F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10241 |
RM200DA-24F |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10242 |
RM20DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10243 |
RM20TPM-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10244 |
RM20TPM-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10245 |
RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10246 |
RM30TA-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10247 |
RM30TB-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10248 |
RM30TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10249 |
RM400DY-66S |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10250 |
RM500DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10251 |
RM500DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10252 |
RM500DZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10253 |
RM500UZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10254 |
RM500UZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10255 |
RM500UZ-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10256 |
RM50DA/CA/C1A-XXF |
Fast Recovery Diode Modules, F Series (for Bipolar speed switching) |
Mitsubishi Electric Corporation |
| 10257 |
RM50TC-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10258 |
RM50TC-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10259 |
RM50TC-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 10260 |
RM600DY-66S |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
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