| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
25LC160-I/P |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI™) ... |
Microchip |
| 1022 |
25LC160-I/SN |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI™) ... |
Microchip |
| 1023 |
25LC160/P |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI™) ... |
Microchip |
| 1024 |
25LC160/SN |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI™) ... |
Microchip |
| 1025 |
25LC160T-I/SN |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI™) ... |
Microchip |
| 1026 |
25LC160T/SN |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI™) ... |
Microchip |
| 1027 |
266 |
T-1 3/4 subminiature, miniature grooved lamp. 2.5 volts, 0.35 amps. |
Gilway Technical Lamp |
| 1028 |
268 |
T-1 3/4 subminiature, miniature flanged lamp. 2.5 volts, 0.35 amps. |
Gilway Technical Lamp |
| 1029 |
27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM |
Winbond Electronics |
| 1030 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
| 1031 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
| 1032 |
288 |
Subminiature halogen lamp. 5.0V, 6.0V; 0.90A, 1,00A; 54 lumens, 100 lumens. |
Gilway Technical Lamp |
| 1033 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 1034 |
28C256AJC-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1035 |
28C256AJC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 1036 |
28C256AJC-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1037 |
28C256AJC-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1038 |
28C256AJC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 1039 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 1040 |
28C256AJC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1041 |
28C256AJI-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1042 |
28C256AJI-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
| 1043 |
28C256AJI-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1044 |
28C256AJI-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
| 1045 |
28C256AJI-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
| 1046 |
28C256AJI-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1047 |
28C256AJI-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
| 1048 |
28C256AJI-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1049 |
28C256AJM-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 1050 |
28C256AJM-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
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