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Datasheets for CAL

Datasheets found :: 33788
Page: | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 | 42 |
No. Part Name Description Manufacturer
1111 28C256ATC-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
1112 28C256ATC-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1113 28C256ATI-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
1114 28C256ATI-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1115 28C256ATI-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
1116 28C256ATI-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1117 28C256ATI-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
1118 28C256ATI-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1119 28C256ATI-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
1120 28C256ATI-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1121 28C256ATM-1 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. Turbo IC
1122 28C256ATM-1 High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1123 28C256ATM-2 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. Turbo IC
1124 28C256ATM-2 High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1125 28C256ATM-3 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
1126 28C256ATM-3 High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1127 28C256ATM-4 High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1128 28C256ATM-4 High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
1129 28LV256JC-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
1130 28LV256JC-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1131 28LV256JC-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
1132 28LV256JC-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1133 28LV256JC-5 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. Turbo IC
1134 28LV256JC-5 Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1135 28LV256JC-6 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Turbo IC
1136 28LV256JC-6 Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1137 28LV256JI-3 Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC
1138 28LV256JI-3 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Turbo IC
1139 28LV256JI-4 Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Turbo IC
1140 28LV256JI-4 Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Turbo IC


Datasheets found :: 33788
Page: | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 | 42 |



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