| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1022 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1023 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1024 |
BGY13 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1025 |
BGY13A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1026 |
BGY13B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1027 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1028 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1029 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1030 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1031 |
BGY14 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1032 |
BGY14A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1033 |
BGY14B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1034 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1035 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1036 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1037 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1038 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1039 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1040 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1041 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1042 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 1043 |
BSM30GP60 |
Elektrische Eigenschaften / Electrical properties |
Eupec GmbH |
| 1044 |
BSP17 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
Siemens |
| 1045 |
BSP170 |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Avalanche rated) |
Siemens |
| 1046 |
BSP170P |
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) |
Siemens |
| 1047 |
BSP171 |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level Avalanche rated) |
Siemens |
| 1048 |
BSP171P |
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated) |
Siemens |
| 1049 |
BSP298 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
Siemens |
| 1050 |
BSP299 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated) |
Siemens |
| | | |
