| No. |
Part Name |
Description |
Manufacturer |
| 991 |
AWL04G |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
| 992 |
AWL06G |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
| 993 |
AWL08G |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
| 994 |
AWL10G |
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS |
EIC discrete Semiconductors |
| 995 |
BA12X |
90V Controlled Avalanche diode |
IPRS Baneasa |
| 996 |
BA21W |
70V Controlled Avalanche diode |
IPRS Baneasa |
| 997 |
BAS11 |
Controlled avalanche rectifiers |
Philips |
| 998 |
BAS12 |
Controlled avalanche rectifiers |
Philips |
| 999 |
BAS29 |
General purpose controlled avalanche (double) diodes |
Nexperia |
| 1000 |
BAS29 |
General purpose controlled avalanche (double) diodes |
NXP Semiconductors |
| 1001 |
BAS29 |
General purpose controlled avalanche (double) diodes |
Philips |
| 1002 |
BAS31 |
General purpose controlled avalanche (double) diodes |
Nexperia |
| 1003 |
BAS31 |
General purpose controlled avalanche (double) diodes |
NXP Semiconductors |
| 1004 |
BAS31 |
General purpose controlled avalanche (double) diodes |
Philips |
| 1005 |
BAS31 |
Dual In-Series General-Purpose Controlled-Avalanche Diode |
Vishay |
| 1006 |
BAS35 |
General purpose controlled avalanche (double) diodes |
Nexperia |
| 1007 |
BAS35 |
General purpose controlled avalanche (double) diodes |
NXP Semiconductors |
| 1008 |
BAS35 |
General purpose controlled avalanche (double) diodes |
Philips |
| 1009 |
BAT31 |
Silicon Avalanche noise diode |
Philips |
| 1010 |
BAW21 |
Avalanche diode for telephony |
IPRS Baneasa |
| 1011 |
BAW21 |
Controlled avalanche silicon epitaxy planar diode |
ITT Industries |
| 1012 |
BAX12 |
Avalanche diode for telephony |
IPRS Baneasa |
| 1013 |
BAX12 |
Silicon whiskerless diode, controlled avalanche diode, avalanche voltage 120-175V at 1mA |
Mullard |
| 1014 |
BAX12 |
Silicon whiskerless diode, controlled avalanche diode, avalanche voltage 120-175V at 1mA |
Mullard |
| 1015 |
BAX12 |
Silicon Oxide Passivated Avalanche Diode |
Philips |
| 1016 |
BAX12 |
Controlled avalanche diode |
Philips |
| 1017 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1018 |
BGY12A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1019 |
BGY12B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 1020 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
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