| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2SC2563 |
Silicon NPN epitaxial audio frequency power transistor |
TOSHIBA |
| 1022 |
2SC2564 |
Silicon NPN epitaxial power transistor, complementary to 2SA1094 |
TOSHIBA |
| 1023 |
2SC2565 |
Silicon NPN epitaxial power transistor, complementary to 2SA1095 |
TOSHIBA |
| 1024 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1025 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 1026 |
2SC2591 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 1027 |
2SC2592 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 1028 |
2SC2609 |
NPN epitaxial planar RF power VHF transistor 100W 28V |
Mitsubishi Electric Corporation |
| 1029 |
2SC2618 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1030 |
2SC2619 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1031 |
2SC2620 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 1032 |
2SC2633 |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 1033 |
2SC2644 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Wideband Amplifier Applications (fT=4GHz) |
TOSHIBA |
| 1034 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 1035 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 1036 |
2SC2668 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, IF Amplifier Applications |
TOSHIBA |
| 1037 |
2SC2669 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications |
TOSHIBA |
| 1038 |
2SC2670 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications AM High Frequency Amplifier Applications AM Frequency Converter Applications |
TOSHIBA |
| 1039 |
2SC2671 |
Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
Panasonic |
| 1040 |
2SC2671(H) |
Si NPN epitaxial planar. UHF low-noise amplifier. |
Panasonic |
| 1041 |
2SC2671H |
Transistor - Silicon NPN Epitaxial Planar Type |
Panasonic |
| 1042 |
2SC2690 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 1043 |
2SC2690A |
PNP/NPN SILICON EPITAXIAL TRANSISTOR |
Unknow |
| 1044 |
2SC2694 |
NPN Epitaxial Planar Type |
Mitsubishi Electric Corporation |
| 1045 |
2SC2703 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1046 |
2SC2704 |
Silicon NPN epitaxial audio frequency transistor, complementary to 2SA1144 |
TOSHIBA |
| 1047 |
2SC2705 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1048 |
2SC2706 |
Silicon NPN epitaxial audio frequency power transistor, complementary to 2SA1146 |
TOSHIBA |
| 1049 |
2SC2710 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier Applications |
TOSHIBA |
| 1050 |
2SC2712 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
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