| No. |
Part Name |
Description |
Manufacturer |
| 991 |
2SC2471 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 992 |
2SC2472 |
SILICON NPN EPITAXIAL UHF AMPLIFIER |
Unknow |
| 993 |
2SC2481 |
Silicon NPN epitaxial transistor, color TV vert. deflection, class B sound output applications |
TOSHIBA |
| 994 |
2SC2483 |
Silicon NPN epitaxial high-voltage transistor, complementary to 2SA1195 |
TOSHIBA |
| 995 |
2SC2484 |
Silicon NPN epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 996 |
2SC2485 |
SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic |
| 997 |
2SC2486 |
SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic |
| 998 |
2SC2488 |
SI NPN EPITAXIAL MESA |
Panasonic |
| 999 |
2SC2489 |
SI NPN EPITAXIAL MESA |
Panasonic |
| 1000 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 1001 |
2SC2499 |
Silicon NPN Epitaxial planar type transistor |
TOSHIBA |
| 1002 |
2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1003 |
2SC2508 |
Silicon NPN epitaxial planar VHF band power transistor 27W |
TOSHIBA |
| 1004 |
2SC2509 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications |
TOSHIBA |
| 1005 |
2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) |
TOSHIBA |
| 1006 |
2SC2519 |
SILICON NPN EPITAXIAL PLANAR |
Panasonic |
| 1007 |
2SC2531 |
Silicon NPN epitaxial planar transistor, 2-30MH SSB linear power amplifier applications 28V supply voltage use |
TOSHIBA |
| 1008 |
2SC2532 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Driver Stage for LED Lamp Applications Temperature Compensation Applications |
TOSHIBA |
| 1009 |
2SC2538 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1010 |
2SC2539 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1011 |
2SC2540 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1012 |
2SC2543 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1013 |
2SC2544 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1014 |
2SC2545 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1015 |
2SC2546 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1016 |
2SC2547 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1017 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
| 1018 |
2SC2551 |
Transistor Silicon NPN Epitaxial Type (PCT process) Hight Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications |
TOSHIBA |
| 1019 |
2SC2561 |
Si NPN epitaxial planar. RF amplifier. |
Panasonic |
| 1020 |
2SC2562 |
Silicon NPN epitaxial high-current switching transistor |
TOSHIBA |
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