| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
Q62702-F982 |
PNP Silicon RF Transistor (For VHF oscillator applications) |
Siemens |
| 1022 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 1023 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1024 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 1025 |
Q62702-G0057 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 1026 |
Q62702-G0058 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Multifunctional casc. 50 �� block LNA / MIX Unconditionally stable) |
Siemens |
| 1027 |
Q62702-G0067 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 1028 |
Q62702-G0071 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Gain Control range over 50dB) |
Siemens |
| 1029 |
Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 1030 |
Q62702-G44 |
GaAs MMIC (Monolithic microwave IC MMIC-Amplifier for mobile communication) |
Siemens |
| 1031 |
Q62702-K0047 |
NEU: 2fach-Silizium-PIN-Fotodiode in SMT NEW: 2-Chip Silicon PIN Photodiode in SMT |
Siemens |
| 1032 |
Q62702-K34 |
6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array |
Siemens |
| 1033 |
Q62702-K35 |
6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array |
Siemens |
| 1034 |
Q62702-K8 |
3fach-Silizium-Fotodiodenzeile 3-Chip Silicon Photodiode Array |
Siemens |
| 1035 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1036 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1037 |
Q62702-L96 |
GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) |
Siemens |
| 1038 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 1039 |
Q62702-M0002 |
PNP Silicon Transistors |
Siemens |
| 1040 |
Q62702-M0003 |
PNP Silicon Transistor |
Siemens |
| 1041 |
Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) |
Siemens |
| 1042 |
Q62702-P0330 |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package |
Siemens |
| 1043 |
Q62702-P0961 |
NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package |
Siemens |
| 1044 |
Q62702-P0988 |
NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package |
Siemens |
| 1045 |
Q62702-P1000 |
NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
Siemens |
| 1046 |
Q62702-P1001 |
GaAs Infrared Emitter |
Siemens |
| 1047 |
Q62702-P1002 |
GaAs Infrared Emitter |
Siemens |
| 1048 |
Q62702-P102 |
Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter |
Siemens |
| 1049 |
Q62702-P1029 |
Silicon-PIN-Photodiode |
Siemens |
| 1050 |
Q62702-P1051 |
Silicon PIN Photodiode with Daylight Filter |
Siemens |
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