| No. |
Part Name |
Description |
Manufacturer |
| 901 |
Q62702-F1575 |
NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems) |
Siemens |
| 902 |
Q62702-F1576 |
NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications) |
Siemens |
| 903 |
Q62702-F1577 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 904 |
Q62702-F1582 |
PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner) |
Siemens |
| 905 |
Q62702-F1586 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 906 |
Q62702-F1587 |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 907 |
Q62702-F1590 |
NPN Silicon RF Transistor (For medium power amplifiers) |
Siemens |
| 908 |
Q62702-F1591 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
| 909 |
Q62702-F1592 |
NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) |
Siemens |
| 910 |
Q62702-F1594 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) |
Siemens |
| 911 |
Q62702-F1601 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) |
Siemens |
| 912 |
Q62702-F1611 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
| 913 |
Q62702-F1613 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 914 |
Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 915 |
Q62702-F1628 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 916 |
Q62702-F1645 |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 917 |
Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 918 |
Q62702-F1681 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
| 919 |
Q62702-F1685 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 920 |
Q62702-F1771 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 921 |
Q62702-F1772 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 922 |
Q62702-F1773 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 923 |
Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 924 |
Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 925 |
Q62702-F1776 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 926 |
Q62702-F1794 |
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
Siemens |
| 927 |
Q62702-F182 |
N-Channel junction field-Effect Transistors |
Siemens |
| 928 |
Q62702-F205 |
N-Channel junction field-Effect Transistors |
Siemens |
| 929 |
Q62702-F209 |
N-Channel junction field-Effect Transistors |
Siemens |
| 930 |
Q62702-F219 |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
Siemens |
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