| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 1022 |
2SD886 |
Si NPN triple diffused planar. High hFE, AF power amplifier. |
Panasonic |
| 1023 |
2SD886A |
Si NPN triple diffused planar. High hFE, AF power amplifier. |
Panasonic |
| 1024 |
2SD888 |
High hff,AF Power Amplifier |
Unknow |
| 1025 |
2SD968 |
Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 1026 |
2SD968 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 1027 |
2SD973 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) |
Panasonic |
| 1028 |
2SJ200 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 1029 |
2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 1030 |
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 1031 |
2SJ338 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 1032 |
2SJ440 |
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE - AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 1033 |
2SJ440-Y |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
TOSHIBA |
| 1034 |
2SJ48 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1035 |
2SJ49 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1036 |
2SJ50 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1037 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 1038 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
| 1039 |
2SK133 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1040 |
2SK134 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1041 |
2SK135 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 1042 |
2SK1529 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 1043 |
2SK1530 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 1044 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 1045 |
2SK2013 |
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 1046 |
2SK2162 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 1047 |
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 1048 |
2SK2467-Y |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1049 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 1050 |
2SK2795 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
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