| No. |
Part Name |
Description |
Manufacturer |
| 901 |
2SD2130 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 902 |
2SD2137 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 903 |
2SD2137 |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 904 |
2SD2151 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 905 |
2SD2155 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 906 |
2SD2206 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 907 |
2SD2209 |
For power amplification and switching |
Panasonic |
| 908 |
2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
NEC |
| 909 |
2SD2242A |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 910 |
2SD2254 |
Silicon PNP epitaxial planar type Darlington(For power amplification) |
Panasonic |
| 911 |
2SD2254 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 912 |
2SD2255 |
Silicon NPN triple diffusion planar type Darlington For power amplification |
Panasonic |
| 913 |
2SD227 |
Medium Power Amplifiers and Switches |
Unknow |
| 914 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 915 |
2SD2273 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 916 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
| 917 |
2SD2341 |
For power amplification |
Panasonic |
| 918 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
| 919 |
2SD235 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 920 |
2SD2352 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 921 |
2SD2353 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 922 |
2SD2374 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 923 |
2SD2374 |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 924 |
2SD2374A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 925 |
2SD2375 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 926 |
2SD2384 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 927 |
2SD2385 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 928 |
2SD2386 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 929 |
2SD2387 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 930 |
2SD2406 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
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