| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1022 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1023 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
| 1024 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1025 |
BBY52-03W |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1026 |
BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1027 |
BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1028 |
BBY53-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 1029 |
BCY59 |
Silicon NPN epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY79 |
AEG-TELEFUNKEN |
| 1030 |
BCY79 |
Silicon PNP epitaxial planar transistor designed for use in AF input stages and driver stages. Complementary to BCY59 |
AEG-TELEFUNKEN |
| 1031 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 1032 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 1033 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 1034 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 1035 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 1036 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 1037 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 1038 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 1039 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 1040 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 1041 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 1042 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 1043 |
BF155 |
Epitaxial planar NPN transistor designed for UHF amplifier and mixer-oscillator applications up to 900MHz |
SGS-ATES |
| 1044 |
BF158 |
Silicon Planar NPN RF transistor designed for use as IF amplifier in TV receivers |
SGS-ATES |
| 1045 |
BF166 |
Epitaxial planar NPN transistor designed to be used as a gain-controlled VHF amplifier |
SGS-ATES |
| 1046 |
BF222 |
Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC |
SGS-ATES |
| 1047 |
BF272A |
Epitaxial planar PNP transistor designed for RF stages of UHF-VHF tuners, high gain, low feedback capacitance, low noise |
SGS-ATES |
| 1048 |
BF272S |
Epitaxial planar PNP transistor designed for UHF-VHF low noise amplifier, high gain, low feedback capacitance |
SGS-ATES |
| 1049 |
BF316A |
Epitaxial planar PNP transistor designed for use as oscillator-mixer in TV tuners |
SGS-ATES |
| 1050 |
BFG34 |
Silicon-epitaxial NPN transistor designed for wideband application in CATV and MATV |
Philips |
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