| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
| 1052 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
| 1053 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 1054 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 1055 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 1056 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
| 1057 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1058 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1059 |
BFW92 |
Epitaxial planar NPN transistor designed for wide band common-emitter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1060 |
BFX17 |
Epitaxial planar NPN transistor designed for high-voltage, high-current class C VHF amplifier applications |
SGS-ATES |
| 1061 |
BFX89 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 1062 |
BFY88 |
Silicon NPN epitaxial planar RF transistor designed for use in UHF amplifier stages, emitter grounded input stages and oscillating mixer stages |
AEG-TELEFUNKEN |
| 1063 |
BFY90 |
Epitaxial planar NPN transistor designed for wide band linear amplifier applications up to 1GHz |
SGS-ATES |
| 1064 |
BLV90SL |
UHF Power NPN Transistor designed for use in mobile radio transmitters in the 900 MHz band |
Philips |
| 1065 |
BN1A4M |
The BN1A4M is designed for use in medium speed switching circuit. |
NEC |
| 1066 |
BN1F4M |
The BN1F4M is designed for use in medium speed switching circuit. |
NEC |
| 1067 |
BSW11 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits |
AEG-TELEFUNKEN |
| 1068 |
BSW12 |
Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 |
AEG-TELEFUNKEN |
| 1069 |
BU205 |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. |
USHA India LTD |
| 1070 |
BU208 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1071 |
BU208A |
NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. |
USHA India LTD |
| 1072 |
BU208D |
5A NPN silicon power transistor 1500V 60V designed for TV horizontal deflection, with integrated damper diode |
Motorola |
| 1073 |
BU209 |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1074 |
BU209A |
NPN silicon power high-voltage transistor designed for use in colour televisions |
Motorola |
| 1075 |
BU508A |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 1076 |
BU508D |
NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 8Adc, PD = 125W. |
USHA India LTD |
| 1077 |
BU7150NUV |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| 1078 |
BU7150NUV-E2 |
Headphone Amplifier Designed for 0.93V Low Voltage Operation |
ROHM |
| 1079 |
BUV11N |
NPN Silicon power metal transistor 20A, designed for high speed, high current, high power applications |
Motorola |
| 1080 |
BX DIELECTRIC |
Monolithic Ceramic Chip Capacitors, Designed for Excellent Temperature Voltage Coefficient, Excellent Aging Characteristics |
Vishay |
| | | |
