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Datasheets for TEND

Datasheets found :: 1963
Page: | 31 | 32 | 33 | 34 | 35 | 36 | 37 | 38 | 39 |
No. Part Name Description Manufacturer
1021 KM416V1004BT-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
1022 KM416V1004BT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
1023 KM416V1004BT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
1024 KM416V1004BT-L7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
1025 KM416V1004C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
1026 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
1027 KM416V1004CJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
1028 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
1029 KM416V1004CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
1030 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
1031 KM416V1004CJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
1032 KM416V1004CJ-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
1033 KM416V1004CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
1034 KM416V1004CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
1035 KM416V1004CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
1036 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
1037 KM416V1004CT-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
1038 KM416V1004CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
1039 KM416V1004CT-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
1040 KM416V1004CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
1041 KM416V1004CT-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
1042 KM416V1004CT-L6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
1043 KM416V1004CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh Samsung Electronic
1044 KM416V1004CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh Samsung Electronic
1045 KM416V1004CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh Samsung Electronic
1046 KM416V1204BJ 1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT Samsung Electronic
1047 KM416V1204BJ-5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
1048 KM416V1204BJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
1049 KM416V1204BJ-7 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
1050 KM416V1204BJ-L5 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic


Datasheets found :: 1963
Page: | 31 | 32 | 33 | 34 | 35 | 36 | 37 | 38 | 39 |



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