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Datasheets for TEND

Datasheets found :: 1963
Page: | 28 | 29 | 30 | 31 | 32 | 33 | 34 | 35 | 36 |
No. Part Name Description Manufacturer
931 KM416C1204BT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
932 KM416C1204BT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
933 KM416C1204BT-L7 5V, 1M x 16 bit CMOS DRAM with extended data out, 70ns Samsung Electronic
934 KM416C1204C 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
935 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
936 KM416C1204CJ-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
937 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
938 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
939 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
940 KM416C1204CJ-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
941 KM416C1204CJ-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
942 KM416C1204CJ-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
943 KM416C1204CJL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
944 KM416C1204CJL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
945 KM416C1204CJL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
946 KM416C1204CT-45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
947 KM416C1204CT-5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
948 KM416C1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
949 KM416C1204CT-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
950 KM416C1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
951 KM416C1204CT-L45 5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns Samsung Electronic
952 KM416C1204CT-L5 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns Samsung Electronic
953 KM416C1204CT-L6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
954 KM416C1204CTL-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh Samsung Electronic
955 KM416C1204CTL-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh Samsung Electronic
956 KM416C1204CTL-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh Samsung Electronic
957 KM416C254D 256K x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
958 KM416C254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
959 KM416C254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
960 KM416C254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic


Datasheets found :: 1963
Page: | 28 | 29 | 30 | 31 | 32 | 33 | 34 | 35 | 36 |



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