| No. |
Part Name |
Description |
Manufacturer |
| 10381 |
MMBT6428 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10382 |
MMBTA05 |
NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1H |
Samsung Electronic |
| 10383 |
MMBTA06 |
NPN Epitaxial Silicon Transistor, case SOT-23 marking 1G |
Samsung Electronic |
| 10384 |
MMBTA13 |
NPN Epitaxial Silicon Transistor, marking 1M |
Samsung Electronic |
| 10385 |
MMBTA14 |
NPN Epitaxial Silicon Transistor, marking 1N |
Samsung Electronic |
| 10386 |
MMBTA20 |
NPN Epitaxial Silicon Transistor, marking 1C |
Samsung Electronic |
| 10387 |
MMBTA42 |
NPN Epitaxial Silicon Transistor, marking 1D |
Samsung Electronic |
| 10388 |
MMBTA43 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking with 1E |
Samsung Electronic |
| 10389 |
MMBTA55 |
PNP Epitaxial Silicon Transistor, marking 2H |
Samsung Electronic |
| 10390 |
MMBTA56 |
PNP Epitaxial Silicon Transistor, marking 2G |
Samsung Electronic |
| 10391 |
MMBTA63 |
PNP Epitaxial Silicon Transistor, marking 2U |
Samsung Electronic |
| 10392 |
MMBTA64 |
PNP Epitaxial Silicon Transistor, marking 2V |
Samsung Electronic |
| 10393 |
MMBTA92 |
PNP Epitaxial Silicon Transistor, marking 2D |
Samsung Electronic |
| 10394 |
MMBTA93 |
PNP Epitaxial Silicon Transistor, marking 2E |
Samsung Electronic |
| 10395 |
MMBTH10 |
NPN Epitaxial Silicon Transistor, marking 3E |
Samsung Electronic |
| 10396 |
MMBTH24 |
NPN Epitaxial Silicon Transistor, marking 3A |
Samsung Electronic |
| 10397 |
MMD6050 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 10398 |
MMD6100 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 10399 |
MMD6150 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 10400 |
MMD70 |
Micro-Miniature Silicon Epitaxial Switching Diode |
Motorola |
| 10401 |
MMD7000 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 10402 |
MMD7001 |
Micro-Miniature Silicon Epitaxial Dual Switching Diode |
Motorola |
| 10403 |
MP2000A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
| 10404 |
MP2100A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
| 10405 |
MP2200A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
| 10406 |
MP2300A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
| 10407 |
MP2400A |
PNP Alloy-Diffused Epitaxial Germanium power transistor designed for high-voltage switching, core drivers and power converter applications |
Motorola |
| 10408 |
MP4005 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10409 |
MP4006 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10410 |
MP4013 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
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