| No. |
Part Name |
Description |
Manufacturer |
| 10411 |
MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10412 |
MP4021 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10413 |
MP4024 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10414 |
MP4025 |
Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching |
TOSHIBA |
| 10415 |
MP4101 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching. |
TOSHIBA |
| 10416 |
MP4104 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10417 |
MP4301 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10418 |
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10419 |
MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10420 |
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10421 |
MP4501 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10422 |
MP4502 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10423 |
MP4503 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10424 |
MP4504 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10425 |
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10426 |
MP6301 |
Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications 3-Phase Motor Drive and Bipolar Drive of Pulse Motor |
TOSHIBA |
| 10427 |
MP6901 |
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. |
TOSHIBA |
| 10428 |
MPS-A13 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
| 10429 |
MPS-A14 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
| 10430 |
MPS-A65 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
| 10431 |
MPS-A66 |
SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
Micro Electronics |
| 10432 |
MPS2222 |
Planar passivated epitaxial NPN silicon transistor. 30V, 400mA. |
General Electric Solid State |
| 10433 |
MPS2222 |
60 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10434 |
MPS2222A |
Planar passivated epitaxial NPN silicon transistor. 40V, 400mA. |
General Electric Solid State |
| 10435 |
MPS2222A |
75 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
| 10436 |
MPS2711 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10437 |
MPS2711 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
| 10438 |
MPS2712 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
| 10439 |
MPS2712 |
NPN silicon epitaxial transistor designed for low-power, small-signal audio applications |
Motorola |
| 10440 |
MPS2716 |
NPN silicon planar epitaxial transistor |
Micro Electronics |
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