| No. |
Part Name |
Description |
Manufacturer |
| 1051 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
| 1052 |
2N6504 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1053 |
2N6504 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1054 |
2N6505 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1055 |
2N6505 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1056 |
2N6505T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1057 |
2N6505T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1058 |
2N6507 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1059 |
2N6507 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1060 |
2N6507T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1061 |
2N6507T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1062 |
2N6508 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1063 |
2N6508 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1064 |
2N6509 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1065 |
2N6509 |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1066 |
2N6509T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1067 |
2N6509T |
Silicon Controlled Rectifiers |
ON Semiconductor |
| 1068 |
2N6564 |
300 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
| 1069 |
2N6565 |
400 V, silicon controlled rectifier |
Boca Semiconductor Corporation |
| 1070 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
| 1071 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
| 1072 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 1073 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 1074 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 1075 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 1076 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 1077 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 1078 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
| 1079 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 1080 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
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